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Found: 101      Displaying: 61 - 80
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
61.
ER1001CT100V, 10A super fast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
49K
62.
ER1001CT100V, 10A super fast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
49K
63.
F1001CPatented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
6
-65°C
150°C
33K
64.
HER3001CHigh efficiency rectifier. Max recurrent peak reverse voltage 50V, max RMS voltage 35V, max DC blocking voltage 50V. Max average forward recttified current 30.0A at 75degreC.
RECTR
TO-247
3
-65°C
150°C
26K
65.
MAS7001CBRadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
66.
MAS7001CCRadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
67.
MAS7001CDRadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
68.
MAS7001CERadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
69.
MAS7001CLRadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
70.
MAS7001CSRadiation hard 512 x 9 bit FIFO
DYNEX
CDIL
28
-55°C
125°C
144K
71.
MT5C1001C-20L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
72.
MT5C1001C-20L/XT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-55°C
125°C
166K
73.
MT5C1001C-25L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
74.
MT5C1001C-35L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
75.
MT5C1001C-40L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
76.
MT5C1001C-55L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
77.
MT5C1001C-70L/IT1 meg x 4 SRAM memory array
AUSTN
DIP
28
-40°C
85°C
166K
78.
TC551001CPI-70L131,072- word by 8-bit static RAM, 70ns, low power
TOS
DIP
32
-40°C
85°C
588K
79.
UF1001CTReverse voltage: 100.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
80.
UF1001CTReverse voltage: 100.00V; 10A ultrafast glass passivated rectifier
WTE
TO-220
3
-65°C
150°C
48K
1 2 3 4 5 6


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