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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 1645      Displaying: 1321 - 1340
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1321.
BR211-200200 V, breakover diode
PHLPS
SOD
2
-
-
32K
1322.
BR211SM-200200 V, breakover diode
PHLPS
SOD
2
-
-
32K
1323.
BRS212-200200 V, breakover diode
PHLPS
SOD
2
-
-
32K
1324.
BUK436W-200B200 V, power MOS transistor
PHLPS
SOT
3
-
-
54K
1325.
BUK444-200B200 V, power MOS transistor
PHLPS
SOT
3
-
-
59K
1326.
BUK456-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
50K
1327.
BUK456-200B200 V, power MOS transistor
PHLPS
SOT
3
-
-
50K
1328.
BUK464-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
60K
1329.
BUK464-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
60K
1330.
BUK465-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
57K
1331.
BUK466-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
53K
1332.
BUK482-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
52K
1333.
BUK482-200A200 V, power MOS transistor
PHLPS
SOT
3
-
-
52K
1334.
PSMN040-200W200 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
87K
1335.
PSMN070-200B200 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
149K
1336.
PSMN070-200P200 V, N-channel trenchMOS transistor
PHLPS
SOT
3
-55°C
175°C
149K
1337.
PSMN155-200K200 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
8
-55°C
150°C
273K
1338.
PSMN155-200K200 V, N-channel enhancement mode field-effect transistor
PHLPS
SOT
8
-55°C
150°C
273K
1339.
SMT100-200SMT100. Irm = 2microA @ Vrm = 170V,max. Irm = 50microA @ Vr = 200V,max.
LIFUS
-
-
0°C
150°C
222K
1340.
SMT50-200SMT50. Irm = 2microA @ Vrm = 180V,max. Irm = 50microA @ Vr = 200V,max.
LIFUS
-
-
0°C
150°C
221K
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