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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | CT60AM-18B | 60A insulated gate bipolar transistor for resonant inverter use | MITS | TO-3PL | 4 | -40°C | 150°C | 43K |
| 122. | FS10SM-18A | 10A power mosfet for high-speed switching use | MITS | TO-3P | 4 | -55°C | 150°C | 41K |
| 123. | FS14SM-18A | 14A power mosfet for high-speed switching use | MITS | TO-3P | 4 | -55°C | 150°C | 42K |
| 124. | FS3KM-18A | 3A power mosfet for high-speed switching use | MITS | TO-220FN | 3 | -55°C | 150°C | 46K |
| 125. | FS3SM-18A | 3A power mosfet for high-speed switching use | MITS | TO-3P | 4 | -55°C | 150°C | 42K |
| 126. | FS3VS-18A | 3A power mosfet for high-speed switching use | MITS | TO-220S | 4 | -55°C | 150°C | 40K |
| 127. | FS5KM-18A | 5A power mosfet for high-speed switching use | MITS | TO-220FN | 3 | -55°C | 150°C | 44K |
| 128. | FS5UM-18A | 5A power mosfet for high-speed switching use | MITS | TO-220 | 4 | -55°C | 150°C | 41K |
| 129. | FS5VS-18A | 5A power mosfet for high-speed switching use | MITS | TO-220S | 4 | -55°C | 150°C | 40K |
| 130. | FS7KM-18A | 7A power mosfet for high-speed switching use | MITS | TO-220FN | 3 | -55°C | 150°C | 42K |
| 131. | FS7SM-18A | 7A power mosfet for high-speed switching use | MITS | TO-3P | 4 | -55°C | 150°C | 41K |
| 132. | FS7UM-18A | 7A power mosfet for high-speed switching use | MITS | TO-220 | 4 | -55°C | 150°C | 40K |
| 133. | FS7VS-18A | 7A power mosfet for high-speed switching use | MITS | TO-220S | 4 | -55°C | 150°C | 39K |
| 134. | NGA-186 | DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. | STANF | Low thermal resistan | 4 | -40°C | 85°C | 276K |
| 135. | SLN-186 | DC-4.0 GHz, 3.5 volt 50 ohm LNA MMIC amplifier | STANF | - | 4 | -45°C | 85°C | 93K |
| 136. | SNA-186-TR1 | DC-8 GNz cascadable GaAs HBT MMIC amplifier. 12dB gain, +13dBm P1dB, 1,5:1 input and output VSWR. Devices per reel 1000. Reel size 7". | STANF | Surface Mount Plasti | 4 | -45°C | 85°C | 74K |
| 137. | SNA-186-TR2 | DC-8 GNz cascadable GaAs HBT MMIC amplifier. 12dB gain, +13dBm P1dB, 1,5:1 input and output VSWR. Devices per reel 3000. Reel size 13". | STANF | Surface Mount Plasti | 4 | -45°C | 85°C | 74K |
| 138. | SNA-186-TR3 | DC-8 GNz cascadable GaAs HBT MMIC amplifier. 12dB gain, +13dBm P1dB, 1,5:1 input and output VSWR. Devices per reel 5000. Reel size 13". | STANF | Surface Mount Plasti | 4 | -45°C | 85°C | 74K |
| 139. | SXH-189 | 5-2000 MHz medium power GaAs HBT amplifier. High 3rd order intercept: 39 dBm typ. at 1960 MHz. | STANF | Surface-Mountable Po | 4 | -40°C | 85°C | 280K |
| 140. | SXL-189-TR1 | 800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: +42dBm typ. at 900 MHz. Devices per reel 500. Reel size 7". | STANF | Surface-Mountable Pl | 4 | -45°C | 85°C | 645K |
