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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 2641      Displaying: 1981 - 2000
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1981.
AM29F040-150ECB4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
TSOP
32
0°C
70°C
446K
1982.
AM29F040-150FE4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
TSOP
32
-55°C
125°C
446K
1983.
AM29F040-150FIB4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
TSOP
32
-40°C
85°C
446K
1984.
AM29F040-150PC4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
DIP
32
0°C
70°C
446K
1985.
AM29F040-150PCB4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
DIP
32
0°C
70°C
446K
1986.
AM29F040-150PI4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
DIP
32
-40°C
85°C
446K
1987.
AM29F040-150PIB4 Megabit (524,288 x 8-bit) CMOS 5.0 volt-only, sector erase flash memory, 150ns
AMD
DIP
32
-40°C
85°C
446K
1988.
BYQ28E-150Dual ultrafast soft recovery rectifier, 150V, 10A, 25ns
VISAY
-
3
-40°C
150°C
46K
1989.
BYQ28EB-150Dual ultrafast soft recovery rectifier, 150V, 10A, 25ns
VISAY
TO-263AB
3
-40°C
150°C
46K
1990.
BYQ28EF-150Dual ultrafast soft recovery rectifier, 150V, 10A, 25ns
VISAY
ITO-220AB
3
-40°C
150°C
46K
1991.
E28F128J3A-150StrataFlash memory, x8/x16 (128 Mbit), Vcc=3V, 150ns
INTEL
TSOP
56
-25°C
85°C
380K
1992.
E28F128J3A-150StrataFlash memory, x8/x16 (128 Mbit), Vcc=3V, 150ns
INTEL
TSOP
56
-25°C
85°C
380K
1993.
IC61SP12832-150TQ150MHz; 3.3V; 128K x 32 synchronous pipelined static RAM
ICSI
LQFP
100
0°C
70°C
400K
1994.
IC61SP12836-150B150MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
ICSI
BGA
100
0°C
70°C
400K
1995.
IC61SP12836-150TQ150MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
ICSI
LQFP
100
0°C
70°C
400K
1996.
MAX20-150.0C150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
-
-
-
810K
1997.
MAX20-150.0CA150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
-
-
-
810K
1998.
MAX40-150.0C150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
2
-
-
810K
1999.
MAX40-150.0CA150.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
MDE
-
2
-
-
810K
2000.
RC28F128J3A-150StrataFlash memory, x8/x16 (128 Mbit), Vcc=3V, 150ns
INTEL
BGA
64
-25°C
85°C
380K
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