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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1601. | 269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | AGERE | Butterffly package | 14 | 0°C | 75°C | 85K |
| 1602. | 269-A-120-F1480-A | 1480 nm pump laser module. A - nonisolated,SMF. Operating power 120 mW. A = no connector. | AGERE | Butterffly package | 14 | 0°C | 75°C | 85K |
| 1603. | DA28F320J5-120 | Intel StrataFlash memory 32 Mbit. Access speed 120 ns | INTEL | SSOP | 56 | 0°C | 70°C | 641K |
| 1604. | DA28F320S5-120 | Word-wide FlashFile memory. 32 Mbit, access speed 120 ns | INTEL | SSOP | 56 | 0°C | 70°C | 470K |
| 1605. | DT28F320S5-120 | Word-wide FlashFile memory. 32 Mbit, access speed 120 ns | INTEL | SSOP | 56 | -40°C | 85°C | 470K |
| 1606. | E28F320J5-120 | Intel StrataFlash memory 32 Mbit. Access speed 120 ns | INTEL | TSOP | 56 | 0°C | 70°C | 641K |
| 1607. | FD2000DU-120 | High-frequency rectifier diode for high power, high frequency, press pack type | MITS | - | 2 | -40°C | 125°C | 48K |
| 1608. | FG6000AU-120D | Gate turn-off thyristor for high power inverter use press pack type | MITS | - | 2 | -40°C | 125°C | 59K |
| 1609. | FM1608-120-P | 64 Kb bytewide FRAM memory. 120 ns access | RAMTR | plastic DIP | 28 | -40°C | 85°C | 104K |
| 1610. | FM1608-120-S | 64 Kb bytewide FRAM memory. 120 ns access | RAMTR | SOP | 28 | -40°C | 85°C | 104K |
| 1611. | FM1808-120-P | 256Kb bytewide FRAM memory. 120 ns access | RAMTR | plastic DIP | 28 | -40°C | 85°C | 89K |
| 1612. | FM1808-120-S | 256Kb bytewide FRAM memory. 120 ns access | RAMTR | SOP | 28 | -40°C | 85°C | 89K |
| 1613. | G28F008SC-120 | Byte-wide SmartVoltage FlashFile memory 8 Mbit. Access speed 120 ns | INTEL | microBGA | 40 | 0°C | 70°C | 725K |
| 1614. | G28F016SC-120 | Byte-wide SmartVoltage FlashFile memory 16 Mbit. Access speed 120 ns | INTEL | microBGA | 40 | 0°C | 70°C | 725K |
| 1615. | G28F320J5-120 | Intel StrataFlash memory 32 Mbit. Access speed 120 ns | INTEL | microBGA | 56 | 0°C | 70°C | 641K |
| 1616. | GLT6400M08LL-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | GLINK | TSOP | 32 | -40°C | 85°C | 138K |
| 1617. | GLT6400M08SL-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | GLINK | TSOP | 32 | -40°C | 85°C | 138K |
| 1618. | GLT6400M08SLI-120ST | 120ns; Ultra low power 512K x 8 CMOS SRAM | GLINK | TSOP | 32 | -40°C | 85°C | 138K |
| 1619. | GLT6400M16LL-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | GLINK | TSOP | 44 | -40°C | 85°C | 198K |
| 1620. | GLT6400M16SL-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | GLINK | TSOP | 44 | -40°C | 85°C | 198K |
| 1621. | GLT6400M16SLI-120TC | 120ns; Ultra low power 256K x 16 CMOS SRAM | GLINK | TSOP | 44 | -40°C | 85°C | 198K |
