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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 2044 Displaying: 1041 - 1060# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 1041. | BUK453-100A | PowerMOS transistor, 100V, 14A | PHLPS | - | 3 | -55°C | 175°C | 57K | 1042. | BUK453-100A | PowerMOS transistor, 100V, 14A | PHLPS | - | 3 | -55°C | 175°C | 57K | 1043. | BUK453-100B | PowerMOS transistor, 100V, 13A | PHLPS | - | 3 | -55°C | 175°C | 57K | 1044. | BUK453-100B | PowerMOS transistor, 100V, 13A | PHLPS | - | 3 | -55°C | 175°C | 57K | 1045. | BUK555-100B | PowerMOS transistor logic level FET, drain-source voltage=100V, drain current=22A, drain-source on-state resistance=0.11 Ohm | PHLPS | - | 3 | -55°C | 175°C | 54K | 1046. | BY30-1000 | Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 30A, Vrrm = 1000V. | USHA | DO-218 | 2 | -40°C | 150°C | 46K | 1047. | M48T08-100MH1TR | CMOS 8K x 8 timekeeping SRAM, 100ns | STM | SOH | 28 | 0°C | 70°C | 503K | 1048. | M48T08-100PC | CMOS 8K x 8 timekeeping SRAM, 100ns | STM | PCDIP | 28 | 0°C | 70°C | 503K | 1049. | M48T18-100MH1TR | CMOS 8K x 8 timekeeping SRAM, 100ns | STM | SOH | 28 | 0°C | 70°C | 503K | 1050. | M48T18-100PC | CMOS 8K x 8 timekeeping SRAM, 100ns | STM | PCDIP | 28 | 0°C | 70°C | 503K | 1051. | M48Z08-100MH1TR | CMOS 8K x 8 zeropower SRAM, 100ns | STM | SOH | 28 | 0°C | 70°C | 503K | 1052. | M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | STM | SOH | 28 | -40°C | 85°C | 503K | 1053. | M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | STM | SOH | 28 | -40°C | 85°C | 503K | 1054. | M48Z18-100PC1 | CMOS 8K x 8 zeropower SRAM, 100ns | STM | PCDIP | 28 | 0°C | 70°C | 503K | 1055. | M48Z18-100PC6 | CMOS 8K x 8 zeropower SRAM, 100ns | STM | PCDIP | 28 | -40°C | 85°C | 503K | 1056. | TN1215-1000B-TR | 12A SCRs, 1000V, sensitivity 15mA | STM | D-PAK | 3 | -40°C | 125°C | 113K | 1057. | TN1215-1000G-TR | 12A SCRs, 1000V, sensitivity 15mA | STM | D2PAK | 3 | -40°C | 125°C | 113K | 1058. | V62C18164096L-100BI | 256K x 16, CMOS STATIC RAM, low power, 100ns, operating voltage =1.8V – 2.3V | MOSEL | BGA | 48 | -40°C | 85°C | 51K | 1059. | V62C18164096LL-100B | 256K x 16, CMOS STATIC RAM, double low power, 100ns, operating voltage =1.8V – 2.3V | MOSEL | BGA | 48 | 0°C | 70°C | 51K |
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