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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1981. | BY550-100 | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 100 V. | JGD | - | 2 | -65°C | 150°C | 138K |
| 1982. | BY550-1000 | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V. | JGD | - | 2 | -65°C | 150°C | 138K |
| 1983. | EMIF01-100 | 3.0V; 18W; EMI filter/TVS array. For cellular phones, SMART cards, notebooks, personal digital assistant (PDA), ground positioning system (GPS) | PRTK | SOIC | 16 | -55°C | 150°C | 183K |
| 1984. | EMIF6-100FC | 5.0V; 100mW; EMI filter/TVS array. For cellular phones, SMART cards, notebooks, personal digital assistant (PDA), ground positioning system (GPS) | PRTK | - | - | -40°C | 85°C | 117K |
| 1985. | ispLSI1032E-100LJ | In-system programmable high density PLD, 10ns | LATIC | PLCC | 84 | 0°C | 70°C | 164K |
| 1986. | ispLSI1032E-100LT | In-system programmable high density PLD, 10ns | LATIC | TQFP | 100 | 0°C | 70°C | 164K |
| 1987. | ispLSI1032EA-100LT100 | In-system programmable high density programmable logic, 10ns | LATIC | TQFP | 100 | 0°C | 70°C | 172K |
| 1988. | M27W202-100B6 | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | STM | PDIP | 40 | -40°C | 85°C | 157K |
| 1989. | M27W202-100K6TR | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | STM | PLCC | 44 | -40°C | 85°C | 157K |
| 1990. | M27W202-100N6TR | 2 Mbit (128Kb x16) low voltage UV EPROM, 100ns | STM | TSOP | 40 | -40°C | 85°C | 157K |
| 1991. | pLSI1032E-100LJ | High density programmable logic, 10ns | LATIC | PLCC | 84 | 0°C | 70°C | 212K |
| 1992. | pLSI1032E-100LJ | High density programmable logic, 10ns | LATIC | PLCC | 84 | 0°C | 70°C | 212K |
| 1993. | T15M1024A-100N | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | SOP | 32 | 0°C | 70°C | 85K |
| 1994. | T15M1024A-100N | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | SOP | 32 | 0°C | 70°C | 85K |
| 1995. | T15M1024A-100NI | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | DIP | 32 | 0°C | 70°C | 85K |
| 1996. | T15M1024A-100NI | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | DIP | 32 | 0°C | 70°C | 85K |
| 1997. | T15M1024A-100P | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | SOP | 32 | 0°C | 70°C | 85K |
| 1998. | T15M1024A-100P | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | SOP | 32 | 0°C | 70°C | 85K |
| 1999. | T15M1024A-100PI | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | TSOP | 32 | 0°C | 70°C | 85K |
| 2000. | T15M1024A-100PI | -0.5 to 7V; 0.7W; 128 x 8 low power CMOS static RAM | TMT | TSOP | 32 | 0°C | 70°C | 85K |
