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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 7114 Displaying: 4841 - 4860| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 4841. | 0104-100 | 100 W, 28 V, 100-400 MHz common emitter transistor | GHZ | 55JT | 3 | - | - | 145K | | 4842. | 0105-100 | 100 W, 28 V, 100-500 MHz common emitter transistor | GHZ | 55JT | 3 | - | - | 283K | | 4843. | 1416-100 | 100 W, 50 V, 1400-1600 MHz common base transistor | GHZ | 55AW | 3 | - | - | 311K | | 4844. | BY550-100 | 100 V, 5.0 A silicon rectifier diode | EIC | - | 2 | -65°C | 175°C | 16K | | 4845. | BY550-1000 | 1000 V, 5.0 A silicon rectifier diode | EIC | - | 2 | -65°C | 175°C | 16K | | 4846. | BYW27-1000 | 1000 V, 1.0 A silicon rectifier | EIC | - | 2 | -65°C | 175°C | 15K | | 4847. | BZW04-102 | Working peak reverse voltage: 102.0 V, 1.0 mA, 400 Wtransient voltage suppressor | EIC | - | 2 | -65°C | 175°C | 51K | | 4848. | HM6264ALFP-10L | 8192-word x 8-bit high speed CMOS static RAM, 100ns | HIT | PDIP | 28 | 0°C | 70°C | 54K | | 4849. | HM6264ALP-10L | 8192-word x 8-bit high speed CMOS static RAM, 100ns | HIT | PDIP | 28 | 0°C | 70°C | 54K | | 4850. | HM6264ALSP-10L | 8192-word x 8-bit high speed CMOS static RAM, 100ns | HIT | PDIP | 28 | 0°C | 70°C | 54K | | 4851. | ispLSI1016EA-100LJ44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | PLCC | 44 | 0°C | 70°C | 162K | | 4852. | ispLSI1016EA-100LT44 | In-system programmable high density PLD, 100 MHz, 10ns, low power | LATIC | TQFP | 44 | 0°C | 70°C | 162K | | 4853. | M28F101-100P1 | Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 100ns Access | STM | DIL | 32 | - | - | 197K | | 4854. | M28F512-10C1 | Memory configuration 64Kx8 Memory type Flash Memory size 512 K-bit 512K (64K8) FLASH memory - 100ns Access (PLCC) | STM | PLCC | 32 | - | - | 523K | | 4855. | M48Z30-100PM1 | Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr | STM | DIL | 28 | - | - | 100K | | 4856. | M48Z30-100PM1 | Memory configuration 32Kx8 Memory type Zeropower RAM Memory size 256 K-bit 256K (32K8) ZEROPOWER?CMOS SRAM - 100ns Access Time data retention 10 Yr | STM | DIL | 28 | - | - | 100K | | 4857. | MACH210A-10JC | High-density EE CMOS programmable logic, 10ns, input pull-up resistors | AMD | PLCC | 44 | 0°C | 70°C | 301K | | 4858. | MACH210A-10JC | High-density EE CMOS programmable logic, 64 macrocells, 32 outputs, 38 Inputs, 64 flip-flops; 2 clock choices, 10ns, input pull-up resistors | LATIC | TQFP | 44 | 0°C | 70°C | 347K | | 4859. | MACH210A-10JC | High-density EE CMOS programmable logic, 64 macrocells, 32 outputs, 38 Inputs, 64 flip-flops; 2 clock choices, 10ns, input pull-up resistors | LATIC | PLCC | 44 | 0°C | 70°C | 347K | | 4860. | MACH220-10JC | High-density EE CMOS programmable logic, 96 macrocells, 48 outputs, 56 inputs with pull-up resistors, 96 flip-flops; 4 clock choices, 10ns | LATIC | PLCC | 68 | 0°C | 70°C | 230K |
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