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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | HGTP12N60A4 | 600V, SMPS Series N-Channel IGBT | INTRS | - | - | - | - | 115K |
| 2. | HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 394K |
| 3. | HGTP12N60B3 | 27A, 600V, UFS Series N-Channel IGBTs | INTRS | - | - | - | - | 112K |
| 4. | HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 117K |
| 5. | HGTP12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 117K |
| 6. | HGTP12N60C3 | 24A, 600V, UFS Series N-Channel IGBTs | INTRS | - | - | - | - | 119K |
| 7. | HGTP12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | INTRS | - | - | - | - | 99K |
| 8. | HGTP12N60D1 | 12A, 600V N-Channel IGBT | INTRS | - | - | - | - | 31K |
| 9. | MTP12N10E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 170°C | 239K |
| 10. | MTP12P10 | Power field effect transistor | MOT | - | 4 | -65°C | 150°C | 190K |
| 11. | OR3TP12-6BA256 | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | AGERE | PBGA | 256 | 0°C | 70°C | 2M |
| 12. | OR3TP12-6BA256I | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | AGERE | PBGA | 256 | -40°C | 85°C | 2M |
| 13. | OR3TP12-6BA352 | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-/64-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | AGERE | PBGA | 352 | 0°C | 70°C | 2M |
| 14. | OR3TP12-6PS240 | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | AGERE | SQFP | 240 | 0°C | 70°C | 2M |
| 15. | OR3TP12-6PS240I | ORCA feild-programmable system chip embedded master/target PCI interface. 3.3 V. 32-bit, 33/66 MHz PCI bus interface. Array size 14 x 18. | AGERE | SQFP | 240 | -40°C | 85°C | 2M |
| 16. | STP12NB30 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 56K |
| 17. | STP12NB30FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 56K |
| 18. | STP12NM50 | N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET | STM | - | - | - | - | 115K |
| 19. | STP12NM50FP | N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET | STM | - | - | - | - | 115K |
| 20. | STP12PF06 | P-CHANNEL 60V - 0.18 OHM - 12A TO-220 STRIPFET POWER MOSFET | STM | - | - | - | - | 85K |
