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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | LTE21009R | NPN microwave power transistor | PHLPS | SOT440 | - | - | - | 55K |
| 2. | LTE21025R | NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 51K |
| 3. | MTE215N10E | ISOTOP TMOS E-FET power field effect transistor | MOT | SOT | 4 | -40°C | 150°C | 226K |
| 4. | NTE21 | Silicon complementary PNP transistor. High power, low collector satutation voltage power output. | NTE | ATR | 3 | 0°C | 135°C | 19K |
| 5. | NTE210 | Silicon complementary NPN transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 6. | NTE210 | Silicon complementary NPN transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 7. | NTE2102 | Integrated circuit. NMOS, 1K static RAM (SRAM), 35ns. | NTE | DIP | 16 | 0°C | 70°C | 28K |
| 8. | NTE211 | Silicon complementary PNP transistor. General purpose output & driver. | NTE | TO202 | 3 | -50°C | 150°C | 22K |
| 9. | NTE21128 | Integrated circuit. NMOS, 128K (16K x 8) UV EPROM. | NTE | DIP | 28 | 0°C | 70°C | 37K |
| 10. | NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | NTE | DIP | 18 | 0°C | 70°C | 29K |
| 11. | NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | NTE | DIP | 18 | 0°C | 70°C | 29K |
| 12. | NTE21256 | 262, 144-bit dynamic random access memory (DRAM). | NTE | DIP | 16 | 0°C | 70°C | 42K |
| 13. | NTE213 | Germanium PNP transistor. High power, high gain amplifier. | NTE | TO36 | 2 | -65°C | 110°C | 23K |
| 14. | NTE214 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 15. | NTE215 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 16. | NTE215 | Silicon NPN transistor. Darlington driver. | NTE | TO3P | 3 | 0°C | 150°C | 22K |
| 17. | NTE216 | Silicon NPN transistor. High speed switch, core driver. | NTE | - | 3 | 0°C | 150°C | 19K |
| 18. | NTE218 | Silicon PNP transistor. Audio power output. | NTE | TO3 | 2 | -65°C | 200°C | 23K |
| 19. | NTE219 | Silicon power PNP transistor. Audio power amplifier, medium speed switch. | NTE | TO3 | 3 | -65°C | 200°C | 24K |
