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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | MTB10000-G | LED lamp array. Peak wavelength 567 nm. Emitted color green. | MRKTE | - | 20 | -25°C | 85°C | 68K |
2. | MTB10000-HR | LED lamp array. Peak wavelength 635 nm. Emitted color hi-eff red. | MRKTE | - | 20 | -25°C | 85°C | 68K |
3. | MTB10000-O | LED lamp array. Peak wavelength 635 nm. Emitted color orange. | MRKTE | - | 20 | -25°C | 85°C | 68K |
4. | MTB10000-RG | LED lamp array. Peak wavelength 700 nm. Emitted color red. | MRKTE | - | 20 | -25°C | 85°C | 68K |
5. | MTB10000-UR | LED lamp array. Peak wavelength 660 nm. Emitted color ultra red. | MRKTE | - | 20 | -25°C | 85°C | 68K |
6. | MTB10000-Y | LED lamp array. Peak wavelength 585 nm. Emitted color yellow. | MRKTE | - | 20 | -25°C | 85°C | 68K |
7. | MTB10010U | NPN microwave power transistor | PHLPS | SOT440 | - | - | - | 90K |
8. | MTB10062-HRG | Bi-color LED lamp array. Peak wavelength(nm): 635(HR), 567(G). Emitted color: hi-eff red(HR), green(G). | MRKTE | - | 20 | -25°C | 85°C | 68K |
9. | MTB10N40E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 273K |
10. | STB10NA40 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | STM | - | - | - | - | 127K |
11. | STB10NB20 | N-CHANNEL 200V - 0.30 OHM - 10A - D2PAK POWERMESH MOSFET | STM | - | - | - | - | 81K |
12. | STB10NB50 | N-CHANNEL 500V - 0.55 OHM - 10.6A - D2PAK POWERMESH MOSFET | STM | - | - | - | - | 85K |
13. | STB10NC50 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET | STM | - | - | - | - | 55K |
14. | STB10NC50-1 | N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET | STM | - | - | - | - | 55K |
15. | TB1004AF | CR timer | TOS | SSOP10-P-225-1.00 | 10 | -20°C | 75°C | 230K |
16. | UPTB10 | Transient Voltage Suppressor | MSEMI | POWERMITE | - | - | - | 156K |
17. | VTB1012 | Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K |
18. | VTB1012B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K |
19. | VTB1013 | Process photodiode. Isc = 13 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K |
20. | VTB1013B | Process photodiode. Isc = 1.3 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-46 | 2 | -40°C | 110°C | 27K |