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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2SD313 | 3Ampere NPN silicon power transistor | MOSP | TO-220 | 3 | -55°C | 150°C | 115K |
| 2. | 2SD313 | NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. | USHA | TO-220 | 3 | -55°C | 150°C | 46K |
| 3. | 2SD313 | NPN epitaxial silicon transistor. Low frequency power amplifier | WINGS | TO-220 | 3 | - | - | 30K |
| 4. | CSD3120H | 1200V, 400A phase control single scr thyristor | PWRX | - | - | - | - | 78K |
| 5. | PSD311R-B-70J | Programmable system device, 14 PLD inputs, EPROM=256K, bus width x8, 5V, 70ns | WSI | PLDCC | 44 | 0°C | 70°C | 478K |
| 6. | PSD312-B-70M | Programmable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 70ns | WSI | PQFP | 44 | 0°C | 70°C | 478K |
| 7. | PSD312-B-70U | Programmable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 70ns | WSI | TQFP | 44 | 0°C | 70°C | 478K |
| 8. | PSD312-B-90JI | Programmable system device, 18 PLD inputs, EPROM=512K, SRAM=16K, bus width x8, 5V, 90ns | WSI | PLDCC | 44 | -40°C | 85°C | 478K |
| 9. | SD3100S | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A. | PAJIT | TO-252 | 4 | -55°C | 125°C | 40K |
| 10. | SD3100S-T3 | Reverse voltage: 100.00V; 3.0A DPAK surface mount schottky barrier rectifier | WTE | DPAK | 3 | -50°C | 125°C | 43K |
| 11. | SD3100T | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A. | PAJIT | TO-251AB | 4 | -55°C | 125°C | 40K |
| 12. | SD3100YS-T3 | Reverse voltage: 100.00V; 3.0A DPAK surface mount schottky barrier rectifier | WTE | DPAK | 3 | -50°C | 125°C | 45K |
| 13. | SD3100YS-T3 | Reverse voltage: 100.00V; 3.0A DPAK surface mount schottky barrier rectifier | WTE | DPAK | 3 | -50°C | 125°C | 45K |
| 14. | SD3100YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 3 A. | PAJIT | TO-251AB | 4 | -55°C | 125°C | 40K |
| 15. | SD310DE | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | TO-72 | 4 | -55°C | 125°C | 35K |
| 16. | SD312DE | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | TO-72 | 4 | -55°C | 125°C | 35K |
| 17. | SD314DE | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | TO-72 | 4 | -55°C | 125°C | 35K |
| 18. | XSD310 | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | SMD | 4 | -55°C | 125°C | 35K |
| 19. | XSD312 | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | SMD | 4 | -55°C | 125°C | 35K |
| 20. | XSD314 | High-speed analog N-Channel DMOS FET improved on-resistance | CALOG | SMD | 4 | -55°C | 125°C | 35K |
