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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | BR256 | Single-phase silicon bridge rectifier. VRRM = 600V, VRMS = 420V, VDC = 600V. Current 25A. | RECTR | BR-25 | 4 | -55°C | 175°C | 27K |
| 2. | BR256 | Single-phase silicon bridge rectifier. VRRM = 600V, VRMS = 420V, VDC = 600V. Current 25A. | RECTR | BR-25W | 4 | -55°C | 175°C | 27K |
| 3. | BR256W | 25A single-phase silicon bridge rectifier | DCCOM | BR-25W | 4 | -55°C | 150°C | 429K |
| 4. | CCR256 | Current regulator chip | CDIDI | - | - | -55°C | 175°C | 17K |
| 5. | DCR256 | 9.1 mA, Current regulator diode | CDIDI | DO-7 | 2 | -65°C | 175°C | 15K |
| 6. | FR256 | 800 V, 2.5 A, Fast recovery rectifier | GODAR | R-3 | 2 | -65°C | 150°C | 199K |
| 7. | FR256 | Fast recovery rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 2.5A. | RECTR | R-3 | 2 | -65°C | 150°C | 24K |
| 8. | FR256G | 800 V, 2.5 A, Glass passivated junction fast switching rectifier | GODAR | R-3 | 2 | -55°C | 150°C | 145K |
| 9. | MBR2560CT | Schottky Rectifier | GE | - | - | - | - | 72K |
| 10. | MC-4R256CEE6C-653 | 256M-byte(128M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC | 184-pin RIMM with he | - | - | - | 129K |
| 11. | MC-4R256CEE6C-745 | 256M-byte(128M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC | 184-pin RIMM with he | - | - | - | 129K |
| 12. | MC-4R256CEE6C-845 | 256M-byte(128M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC | 184-pin RIMM with he | - | - | - | 129K |
| 13. | MC-4R256CPE6C-745 | 256M-byte(128M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC | 184-pin RIMM with he | - | - | - | 133K |
| 14. | MC-4R256CPE6C-845 | 256M-byte(128M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC | 184-pin RIMM with he | - | - | - | 133K |
| 15. | MC-4R256FKE6D-745 | 256M; 711MHz direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 116K |
| 16. | MC-4R256FKE6D-845 | 256M; 800MHz direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 116K |
| 17. | MC-4R256FKE8D-653 | 256M-byte (128M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 116K |
| 18. | MC-4R256FKE8D-745 | 256M-byte (128M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 116K |
| 19. | MC-4R256FKE8D-845 | 256M-byte (128M-WORD x 18-bit) direct rambus DRAM RIMM module | ELPID | BGA | 184 | - | - | 116K |
| 20. | R2560A023 | High-power 12 GHz photodiode. Connector FC/SPC. Pigtail SMF-28(1m min). | AGERE | - | 6 | 0°C | 70°C | 43K |
