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Found: 72      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
HGTA32N60E232A, 600V N-Channel IGBT
INTRS
-
-
-
-
31K
2.
HGTG32N60E232A, 600V N-Channel IGBT
INTRS
-
-
-
-
33K
3.
MGP11N60EInsulated gate bipolar transistor
MOT
-
3
-55°C
150°C
123K
4.
MGP11N60EInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
120K
5.
MGP11N60EDInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
145K
6.
MGP14N60EInsulated gate bipolar transistor
MOT
-
3
-55°C
150°C
125K
7.
MGP14N60EInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
121K
8.
MGP21N60EInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
123K
9.
MGP4N60EInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
120K
10.
MGP4N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
ON
TO-220
3
-
-
146K
11.
MGP7N60EInsulated Gate Bipolar Transistor N-Channel
ON
TO-220
3
-
-
118K
12.
MGP7N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
ON
TO-220
3
-
-
144K
13.
MGW14N60EDInsulated Gate Bipolar Transistor
ON
TO-247
3
-
-
154K
14.
MGW21N60EDInsulated gate bipolar transistor
MOT
TO-247AE
3
-55°C
150°C
152K
15.
MGW21N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
ON
TO-247
3
-
-
152K
16.
MTP1N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
232K
17.
MTP2N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
219K
18.
MTP3N60ETMOS E-FET high energy power FET
MOT
-
4
-55°C
150°C
183K
19.
MTP6N60ETMOS E-FET power field effect transistor
MOT
-
4
-55°C
150°C
156K
20.
MTY25N60ETMOS E-FET power field effect transistor
MOT
TO-264
3
-55°C
150°C
236K
1 2 3 4


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