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hb10 datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 14 Displaying: 1 - 14| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | IHB100S4803 | 100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 3.3VDC, rated max. output current 30A. | CANDD | - | 8 | -40°C | 100°C | 241K | | 2. | IHB100S4805 | 100 Watt single output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage 5.1VDC, rated max. output current 20A. | CANDD | - | 8 | -40°C | 100°C | 241K | | 3. | IHB100T480312 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-3.3VDC, V2 +-12VDC, V3 +-12VDC; rated max.output current I1 +-30A, I2 +-4.2A, I3 +-4.2A. | CANDD | - | 12 | -40°C | 100°C | 265K | | 4. | IHB100T480315 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-3.3VDC, V2 +-15VDC, V3 +-15VDC; rated max.output current I1 +-30A, I2 +-3.4A, I3 +-3.4A. | CANDD | - | 12 | -40°C | 100°C | 265K | | 5. | IHB100T480512 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-5.1VDC, V2 +-12VDC, V3 +-12VDC; rated max.output current I1 +-20A, I2 +-4.2A, I3 +-4.2A. | CANDD | - | 12 | -40°C | 100°C | 265K | | 6. | IHB100T480515 | 100 watt triple output half brick DC/DC converter. Input voltage 48(33-75)VDC, rated output voltage: V1 +-5.0VDC, V2 +-15VDC, V3 +-15VDC; rated max.output current I1 +-20A, I2 +-2.0A, I3 +-2.0A. | CANDD | - | 12 | -40°C | 100°C | 265K | | 7. | PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | PHLPS | SOT | 3 | -55°C | 175°C | 331K | | 8. | PHB10N40 | PowerMOS transistor. | PHLPS | SOT404 | 3 | -55°C | 150°C | 69K | | 9. | PHB10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K | | 10. | VHB10-12F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K | | 11. | VHB10-12S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K | | 12. | VHB10-28F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K | | 13. | VHB10-28S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K | | 14. | VHB100-12 | NPN silicon RF power transistor | ADVAN | - | 6 | -65°C | 200°C | 17K |
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