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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | BD-E541RD-A | Red, anode, dual digit LED display | YSTON | DD | - | - | - | 202K |
| 2. | E541 | High efficiency red, right angle/side lighting surface mount LED. Lens translucent red. Luminous intensity at 20mA 5.0mcd (min), 12.0mcd (max). Typ.forward voltage at 20mA 2.00V. | GTL | - | 2 | - | - | 1M |
| 3. | NE5410F | 10-bit high-speed multiplying D/A converter | PHLPS | CERDIP | 16 | 0°C | 70°C | 104K |
| 4. | NTE5410 | Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 600V. | NTE | TO39 | 3 | -40°C | 100°C | 21K |
| 5. | NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 6. | NTE5412 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 7. | NTE5413 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 8. | NTE5414 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 9. | NTE5415 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 10. | NTE5416 | Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V. | NTE | TO126 | 3 | -40°C | 110°C | 21K |
| 11. | NTE5417 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
| 12. | NTE5418 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
| 13. | NTE5419 | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 10A. | NTE | TO220 | 3 | -40°C | 110°C | 18K |
| 14. | R3111E541A-TZ | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: Nch open drain. | RICOH | - | 3 | -40°C | 85°C | 205K |
| 15. | R3111E541C-TZ | Low voltage detector. Detector threshold (-Vdet) 5.4V. Output type: CMOS | RICOH | - | 3 | -40°C | 85°C | 205K |
| 16. | SE5410F | 10-bit high-speed multiplying D/A converter | PHLPS | CERDIP | 16 | -55°C | 125°C | 104K |
