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bc10 datasheet



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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 47      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
1MBC10-060Fuji discrete package IGBT
FUJI
-
3
-
-
166K
2.
1MBC10D-060Fuji discrete package IGBT
FUJI
-
3
-
-
266K
3.
BC107NPN silicon planar epitaxial transistor
ME
TO-18
3
-55°C
175°C
228K
4.
BC10745V Vce, 0.1A Ic, 150MHz NPN bipolar transistor
SAMEL
TO18
-
-
-
14K
5.
BC107LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
STM
-
-
-
-
69K
6.
BC108NPN silicon planar epitaxial transistor
ME
TO-18
3
-55°C
175°C
228K
7.
BC109NPN silicon planar epitaxial transistor
ME
TO-18
3
-55°C
175°C
228K
8.
BC10920V Vce, 0.1A Ic, 150MHz NPN bipolar transistor
SAMEL
TO18
-
-
-
14K
9.
BC109TRANSISTOR
STM
-
-
-
-
141K
10.
DBC10Diffused junction silicon diode, 1A single-phase bridge rectifier
SANYO
1241
4
-
-
37K
11.
GC79BNBC10RIns.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks
GPSEM
-
-
-
-
852K
12.
GC79BNBC10RDIns.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks
GPSEM
-
-
-
-
852K
13.
GC79BNBC10RSIns.Lenght: 70mm; Bolt Lenght: 130mm; bar clamp for hockey punks
GPSEM
-
-
-
-
852K
14.
IRG4BC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
-
3
-55°C
150°C
158K
15.
IRG4BC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
-
3
-55°C
150°C
210K
16.
IRG4BC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
-
3
-55°C
150°C
157K
17.
IRG4BC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
-
3
-55°C
150°C
210K
18.
IRG4BC10SD-LInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-262
3
-55°C
150°C
217K
19.
IRG4BC10SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
DDPak
3
-55°C
150°C
217K
20.
IRG4BC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
-
3
-55°C
150°C
184K
1 2 3


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