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U00 datasheet



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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 19      Displaying: 1 - 19
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
APU0063QE-TY0.3-7 V, 80 CH driver for dot matrix LCD
ANPEC
QFP
100
-30°C
85°C
111K
2.
APU0063YE-TY0.3-7 V, 80 CH driver for dot matrix LCD
ANPEC
Chip form
-
-30°C
85°C
111K
3.
APU0065YE-TY0.3-7 V, 40 CH driver for dot matrix LCD
ANPEC
Chip form
-
-30°C
85°C
134K
4.
APU0066-001QE-TY16 COM/40 SEG driver and controller for dot matrix LCD
ANPEC
QFP
80
-20°C
75°C
357K
5.
APU0066-001YE-TY16 COM/40 SEG driver and controller for dot matrix LCD
ANPEC
Chip form
-
-20°C
75°C
357K
6.
APU0066-002QE-TY16 COM/40 SEG driver and controller for dot matrix LCD
ANPEC
QFP
80
-20°C
75°C
357K
7.
APU0066-002YE-TY16 COM/40 SEG driver and controller for dot matrix LCD
ANPEC
Chip form
-
-20°C
75°C
357K
8.
APU0071-001WE-TY16 COM/80 SEG controller for dot matrix LCD
ANPEC
COG
126
-30°C
85°C
500K
9.
APU0071-001WE-TY16 COM/80 SEG controller for dot matrix LCD
ANPEC
COG
126
-30°C
85°C
500K
10.
APU0071-002WE-TY16 COM/80 SEG controller for dot matrix LCD
ANPEC
COG
126
-30°C
85°C
500K
11.
MSU0012.4-6V 20 voice SMART
MOSEL
-
71
-
-
127K
12.
MSU001T2.4-6V 20 voice SMART
MOSEL
-
71
-
-
127K
13.
TVU001NPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
18K
14.
TVU002NPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
18K
15.
TVU004NPN silicon RF power transistor
ADVAN
-
4
-65°C
200°C
18K
16.
VI-QU00-XXXInputV:90-132/180-264Vac; outputV:5V; 150-600W; 30-120A autoranging AC-DC switcher
VICOR
-
16
-
-
208K
17.
VI-QU00-XXXInputV:90-132/180-264Vac; outputV:5V; 150-600W; 30-120A autoranging AC-DC switcher
VICOR
-
16
-
-
208K
18.
VI-RU00X-XXXXInput Voltage:90-132/180-264Vac; output Voltage:20-95V; 150-600W; 30-120A autoranging AC-DC switcher
VICOR
-
16
-
-
208K
19.
W4NRD8C-U000Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE
-
-
-
-
279K
1


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