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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | HGTD7N60A4S | 600V, SMPS Series N-Channel IGBT | INTRS | - | - | - | - | 168K |
2. | HGTD7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs | INTRS | - | - | - | - | 92K |
3. | HGTD7N60C3S | TRANSISTOR IGBT | FAIR | - | - | - | - | 153K |
4. | HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs | INTRS | - | - | - | - | 144K |
5. | KTD718 | NPN transistor for high power amplifier applications | KEC | TO-3P | 3 | -55°C | 150°C | 277K |
6. | MBM29DL161TD70PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic FBGA | 48 | -20°C | 70°C | 1M |
7. | MBM29DL161TD70PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
8. | MBM29DL161TD70PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
9. | MBM29DL162TD70PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic FBGA | 48 | -20°C | 70°C | 1M |
10. | MBM29DL162TD70PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
11. | MBM29DL162TD70PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
12. | MBM29DL163TD70PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic FBGA | 48 | -20°C | 70°C | 1M |
13. | MBM29DL163TD70PETN | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
14. | MBM29DL163TD70PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
15. | MBM29DL164TD70PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic FBGA | 48 | -25°C | 70°C | 1M |
16. | MBM29DL164TD70PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | FJTSU | plastic TSOP-I | 48 | -20°C | 70°C | 1M |
17. | RD28F1602C3TD70 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,70ns | INTEL | BGA | 66 | -25°C | 85°C | 1M |
18. | RD28F1604C3TD70 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,70ns | INTEL | BGA | 66 | -25°C | 85°C | 1M |
19. | STD7NB20 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 96K |
20. | STD7NS20 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK MESH OVERLAY MOSFET | STM | - | - | - | - | 53K |