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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | IRF130 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 56K |
| 2. | IRF130 | 100V Vdss N-Channel FET (field effect transistor) | SAMEL | TO3 | - | - | - | 22K |
| 3. | IRF130SMD | 100V Vdss N-Channel FET (field effect transistor) | SAMEL | SMD1 | - | - | - | 22K |
| 4. | IRF131 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 56K |
| 5. | IRF1310S | HEXFET power MOSFET | IRF | SMD-220 | 3 | -55°C | 175°C | 361K |
| 6. | IRF132 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 56K |
| 7. | IRF133 | 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 56K |
| 8. | MRF134 | 5 W, N-channel MOS broadband RF power FET | MACOM | - | 4 | - | - | 208K |
| 9. | MRF134 | RF power field-effect transistor | MOT | - | 4 | - | - | 205K |
| 10. | MRF136 | 15 W, N-channel MOS broadband RF power FET | MACOM | - | 4 | - | - | 340K |
| 11. | MRF136 | RF power field-effect transistor | MOT | - | 4 | - | - | 284K |
| 12. | MRF136 | RF power field-effect transistor | MOT | - | 4 | - | - | 284K |
| 13. | MRF136Y | 30 W, N-channel MOS broadband RF power FET | MACOM | - | 4 | - | - | 221K |
| 14. | MRF136Y | RF power field-effect transistor | MOT | - | 4 | - | - | 284K |
| 15. | MRF137 | RF power field-effect transistor | MOT | - | 4 | - | - | 196K |
| 16. | PQ05RF13 | Low power-loss voltage regulator | SHARP | resin full-mold | 4 | -20°C | 80°C | 40K |
| 17. | PQ09RF13 | Low power-loss voltage regulator | SHARP | resin full-mold | 4 | -20°C | 80°C | 40K |
| 18. | PQ12RF13 | Low power-loss voltage regulator | SHARP | resin full-mold | 4 | -20°C | 80°C | 40K |
| 19. | RF133 | RF/IF transceiver for GSM application | CONEX | TSSOP | 20 | -40°C | 85°C | 123K |
| 20. | RF137 | Transceiever for GSM application | CONEX | TQFP | - | -30°C | 85°C | 114K |
