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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | APT1001R1BN | 1000V, 10.5A power MOS IV | ADPOW | TO-247AD | 3 | -55°C | 150°C | 52K |
| 2. | APT1001R1BVFR | 1000V, 11A power MOS V | ADPOW | TO-247 | 3 | -55°C | 150°C | 70K |
| 3. | FR1B-T1 | 1.0A fast recovery surface mount rectifier | WTE | SMB | 2 | -50°C | 150°C | 50K |
| 4. | FR1B-T1 | 1.0A fast recovery surface mount rectifier | WTE | SMB | 2 | -50°C | 150°C | 50K |
| 5. | FR1B-T3 | 1.0A fast recovery surface mount rectifier | WTE | SMB | 2 | -50°C | 150°C | 50K |
| 6. | FR1B-T3 | 1.0A fast recovery surface mount rectifier | WTE | SMB | 2 | -50°C | 150°C | 50K |
| 7. | L-314EIR1BC | 3.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 64K |
| 8. | L-315EIR1BC | 3.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 64K |
| 9. | L-316EIR1BC | 3.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 64K |
| 10. | L-318EIR1BC | 3.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 64K |
| 11. | L-514CIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 12. | L-514EIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 13. | L-515EIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 14. | L-516EIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 15. | L-517EIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 16. | L-518EIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 17. | L-51AEIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 62K |
| 18. | L-53AEIR1BC | 5.0 mm infrared emitting diode | PARA | - | 2 | -35°C | 85°C | 61K |
| 19. | TS68020MR1B/C20 | HCMOS 32-bit virtual memory microprocessor, 20MHz | ATMEL | PGA | 114 | -55°C | 125°C | 1M |
| 20. | TS68020MR1B/C25 | HCMOS 32-bit virtual memory microprocessor, 25MHz | ATMEL | PGA | 114 | -55°C | 125°C | 1M |
