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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | NTE585 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. | NTE | - | 2 | -65°C | 125°C | 15K |
2. | NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
3. | NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
4. | NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
5. | NTE5853 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
6. | NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
7. | NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
8. | NTE5857 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
9. | NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
10. | NTE5859 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |