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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 2N5880 | 80 V, complementary PNP selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 186K |
| 2. | 2N5880 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 180K |
| 3. | 2N5881 | 60 V, complementary NPN selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 186K |
| 4. | 2N5881 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 180K |
| 5. | 2N5882 | 80 V, complementary NPN selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 186K |
| 6. | 2N5882 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 180K |
| 7. | 2N5883 | 60 V, complementary PNP selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 190K |
| 8. | 2N5883 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 183K |
| 9. | 2N5884 | 80 V, complementary PNP selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 190K |
| 10. | 2N5884 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 183K |
| 11. | 2N5884 | hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 | STM | TO-3 | - | - | - | 68K |
| 12. | 2N5885 | 60 V, complementary NPN selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 190K |
| 13. | 2N5885 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 183K |
| 14. | 2N5886 | 80 V, complementary NPN selicon high-power transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 190K |
| 15. | 2N5886 | Complementary silicon high-power transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 183K |
| 16. | 2N5886 | COMPLEMENTARY SILICON HIGH POWER TRANSISTOR | STM | - | - | - | - | 41K |
| 17. | UCN5881EP | BiMOS II dual 8-Bit latched driver with read back | AMS | MS-007AB | 44 | -20°C | 85°C | 79K |
