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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N5550 | Glass Passivated Junction Rectifier | GE | G4 | - | - | - | 53K |
| 2. | 1N5550 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 78K |
| 3. | 1N5550 | Standard Rectifier (trr more than 500ns) | MSEMI | E | - | - | - | 46K |
| 4. | 1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 5. | 1N5550US | Standard Rectifier (trr more than 500ns) | MSEMI | B_MELF(WT) | - | - | - | 78K |
| 6. | 1N5550US | Standard Rectifier (trr more than 500ns) | MSEMI | MELF_E | - | - | - | 46K |
| 7. | 2N5550 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 28K |
| 8. | 2N5550 | NPN transistor for general purpose and high voltage applications | KEC | - | 3 | -55°C | 150°C | 147K |
| 9. | 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 10. | 2N5550 | NPN high-voltage transistors | PHLPS | SOT54 | - | - | - | 43K |
| 11. | 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 34K |
| 12. | 2N5550RLRA | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 13. | 2N5550RLRP | Amplifier Transistor NPN | ON | - | 3 | - | - | 188K |
| 14. | 2N5550S | NPN transistor for general purpose and high voltage applications | KEC | SOT-23 | 3 | -55°C | 150°C | 152K |
| 15. | HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
