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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | AD7572ALN10 | -0.3 to +7V; 1000mW; LC2MOS complete, high speed, 12-bit ADC | AD | DIP | 24 | 0°C | 70°C | 829K |
| 2. | AD7672LN10 | -0.3 to +7V; 1000mW; LC2MOS high-speed 12-bit ADC | AD | DIP | 24 | 0°C | 70°C | 1M |
| 3. | DLN10 | Diffused junction type silicon diode, low-loss rectifier | SANYO | 1264 | 2 | - | - | 58K |
| 4. | MLN1027F | NPN silicon RF power transistor | ADVAN | - | 2 | -65°C | 200°C | 17K |
| 5. | MLN1027S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 6. | MLN1027SL | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 7. | MLN1027SS | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 8. | MLN1030F | NPN silicon RF power transistor | ADVAN | - | 2 | -65°C | 200°C | 17K |
| 9. | MLN1030S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 10. | MLN1030SL | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 11. | MLN1030SS | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 12. | MLN1033F | NPN silicon RF power transistor | ADVAN | - | 2 | -65°C | 200°C | 17K |
| 13. | MLN1033S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 14. | MLN1037F | NPN silicon RF power transistor | ADVAN | - | 2 | -65°C | 200°C | 18K |
| 15. | MLN1037S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 16. | MX7672LN10 | High-speed 12-bit A/D converter with external reference input. Fast conversion time 10 microsec. Linearity +-1/2 LSB. | MAXIM | Plastic DIP | 24 | 0°C | 70°C | 506K |
