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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | IRC530 | HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. | IRF | TO-220 | 5 | -55°C | 175°C | 226K |
| 2. | IRC540 | HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm | IRF | TO-220 | 5 | -55°C | 175°C | 222K |
| 3. | IRC630 | HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 229K |
| 4. | IRC630 | HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 229K |
| 5. | IRC640 | HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 228K |
| 6. | IRC644 | HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 225K |
| 7. | IRC730 | HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 223K |
| 8. | IRC740 | HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 221K |
| 9. | IRC830 | HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 222K |
| 10. | IRC840 | HEXFET power MOSFET. Continuous drain current 8.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 0.85 Ohm | IRF | TO-220 | 5 | -55°C | 150°C | 220K |
| 11. | IRCZ24 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.040 Ohm, ID = 26A. | IRF | TO-220 | 5 | -55°C | 175°C | 145K |
| 12. | IRCZ34 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.050 Ohm, ID = 30A. | IRF | TO-220 | 5 | -55°C | 175°C | 130K |
| 13. | IRCZ44 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 50A. | IRF | TO-220 | 5 | -55°C | 175°C | 132K |
| 14. | MC68302IRC16 | Integrated multiprotocol processor (IMP). Frequency 16.67 MHz. | MOT | PGA | 132 | 0°C | 85°C | 1M |
| 15. | TLK2500IRCP | 1.56 GBPS TO 2.5 GBPS TRANSCEIVER | TI | RCP | 64 | -40°C | 85°C | 268K |
