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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | FQB4N20 | 200V N-Channel MOSFET | FAIR | - | - | - | - | 704K |
2. | FQB4N20L | 200V LOGIC N-Channel MOSFET | FAIR | - | - | - | - | 517K |
3. | FQB4N25 | 250V N-Channel MOSFET | FAIR | - | - | - | - | 729K |
4. | FQB4N50 | 500V N-Channel MOSFET | FAIR | - | - | - | - | 749K |
5. | FQB4N60 | 600V N-Channel MOSFET | FAIR | - | - | - | - | 539K |
6. | FQB4N80 | 800V N-Channel MOSFET | FAIR | - | - | - | - | 659K |
7. | FQB4N90 | 900V N-Channel MOSFET | FAIR | - | - | - | - | 609K |
8. | LNG4B4NPY | Round Type visible light emitting diode | PANAS | - | - | - | - | 29K |
9. | MTB4N80E1 | TMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 160K |
10. | PHB4N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 78K |
11. | PHB4N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 78K |
12. | PHB4N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 80K |
13. | PHB4ND40E | 400 V, power MOS transistor FREDFET, avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 65K |
14. | STB4NB50 | N-CHANNEL 500V - 2.5 OHM - 3.8A - D2PAK/I2PAK POWERMESH MOSFET | STM | - | - | - | - | 64K |
15. | STB4NB80 | N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET | STM | - | - | - | - | 52K |
16. | STB4NC50 | N-CHANNEL 500V 2.2OHM 4A D2PAK POWERMESH II MOSFET | STM | - | - | - | - | 244K |
17. | STB4NC60 | N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET | STM | - | - | - | - | 429K |
18. | STB4NC60A-1 | N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET | STM | - | - | - | - | 338K |
19. | STB4NC80Z | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET | STM | - | - | - | - | 526K |
20. | STB4NC80Z-1 | N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET | STM | - | - | - | - | 526K |