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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 2. | 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 3. | 28C256ATM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 4. | 28C256ATM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 5. | 28C256ATM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 6. | 28C256ATM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 7. | 28C256ATM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 8. | 28C256ATM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 9. | 28C64ATM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 10. | 28C64ATM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 42K |
| 11. | 28C64ATM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 12. | 28C64ATM-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 42K |
| 13. | 28C64ATM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 14. | 28C64ATM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 42K |
| 15. | 28C64ATM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 16. | CXK5V81000ATM-10LLX | 131072-word x 8-bit High Speed CMOS Static RAM | SONY | - | - | - | - | 137K |
| 17. | CXK5V81000ATM-85LLX | 131072-word x 8-bit High Speed CMOS Static RAM | SONY | - | - | - | - | 137K |
| 18. | TriMediaTM-1000 | Programmable Media Processor | PHLPS | - | - | - | - | 198K |
| 19. | TriMediaTM-1100 | Programmable Media Processor | PHLPS | - | - | - | - | 342K |
| 20. | TrimediaTM-1300 | Programmable Media Processor | PHLPS | - | - | - | - | 548K |
