# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 28C256APM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
2. | 28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
3. | 28C256APM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
4. | 28C256APM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
5. | 28C256APM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
6. | 28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
7. | 28C256APM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
8. | 28C256APM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
9. | 28C64APM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
10. | 28C64APM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
11. | 28C64APM-2 | High speed 150 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
12. | 28C64APM-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
13. | 28C64APM-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
14. | 28C64APM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
15. | 28C64APM-4 | High speed 250 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 42K |
16. | CYM1841APM-20C | 256K x 32 Static RAM Module | CYPR | - | - | - | - | 198K |
17. | CYM1841APM-35C | 256K x 32 Static RAM Module | CYPR | - | - | - | - | 198K |
18. | CYM1841APM-45C | 256K x 32 Static RAM Module | CYPR | - | - | - | - | 198K |
19. | X24C01APM-3 | 1K (128 x 8bit) serial E2PROM | XICOR | DIP8P | 8 | -55°C | 125°C | 58K |
20. | X24C01APM-3,5 | 1K (128 x 8bit) serial E2PROM | XICOR | DIP8P | 8 | -55°C | 125°C | 58K |