# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 5962D9960701TUA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
2. | 5962D9960701TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
3. | 5962D9960701TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
4. | 5962D9960701TXX | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
5. | 5962D9960702TUA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
6. | 5962D9960702TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
7. | 5962D9960702TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
8. | 5962D9960703TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
9. | 5962D9960703TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
10. | 5962D9960703TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
11. | 5962D9960703TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
12. | 5962D9960704TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
13. | 5962D9960704TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
14. | 5962D9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
15. | 5962D9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
16. | SA9607MPA | Single phase power/enrgy metering IC with tamper detection | SAMES | DIP | 20 | -25°C | 85°C | 98K |
17. | SA9607MSA | Single phase power/enrgy metering IC with tamper detection | SAMES | SOIC | 20 | -25°C | 85°C | 98K |
18. | SA9607PPA | Programmable single phase energy metering IC with tamper detection | SAMES | DIP | 20 | -25°C | 85°C | 127K |
19. | SA9607PSA | Programmable single phase energy metering IC with tamper detection | SAMES | SOIC | 20 | -25°C | 85°C | 127K |
20. | UM9607 | PIN Diode | MSEMI | SEE_FACTORY | - | - | - | 457K |