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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 5962D9960701TUA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
| 2. | 5962D9960701TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
| 3. | 5962D9960701TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
| 4. | 5962D9960701TXX | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
| 5. | 5962D9960702TUA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
| 6. | 5962D9960702TXA | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 7. | 5962D9960702TXC | 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 8. | 5962D9960703TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
| 9. | 5962D9960703TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -55°C | 125°C | 127K |
| 10. | 5962D9960703TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
| 11. | 5962D9960703TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -55°C | 125°C | 127K |
| 12. | 5962D9960704TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
| 13. | 5962D9960704TUA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) | UTMC | Ceramic flatpack | 36 | -40°C | 125°C | 127K |
| 14. | 5962D9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 15. | 5962D9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 16. | SA9607MPA | Single phase power/enrgy metering IC with tamper detection | SAMES | DIP | 20 | -25°C | 85°C | 98K |
| 17. | SA9607MSA | Single phase power/enrgy metering IC with tamper detection | SAMES | SOIC | 20 | -25°C | 85°C | 98K |
| 18. | SA9607PPA | Programmable single phase energy metering IC with tamper detection | SAMES | DIP | 20 | -25°C | 85°C | 127K |
| 19. | SA9607PSA | Programmable single phase energy metering IC with tamper detection | SAMES | SOIC | 20 | -25°C | 85°C | 127K |
| 20. | UM9607 | PIN Diode | MSEMI | SEE_FACTORY | - | - | - | 457K |
