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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 2. | 5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 3. | 5962H3829435BNC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 4. | 5962H3829435BNX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | UTMC | FlatPack | 28 | -55°C | 125°C | 100K |
| 5. | 5962H3829435BXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 6. | 5962H3829435BXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 7. | 5962H3829435BXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 8. | 5962H3829435SXA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 9. | 5962H3829435SXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 10. | 5962H3829435SXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 11. | 5962H3829435SXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. | UTMC | DIP | 28 | -55°C | 125°C | 100K |
| 12. | CEM9435 | 30V P-channel enhancement mode MOSFET | CETSE | SO-8 | 8 | -55°C | 150°C | 496K |
| 13. | CEM9435A | 30V P-channel enhancement mode MOSFET | CETSE | SO-8 | 8 | -55°C | 150°C | 499K |
| 14. | CET9435A | P-channel enhancement mode field effect transistor | CETSE | SOT-223 | 3 | -65°C | 150°C | 503K |
| 15. | FDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor | FAIR | SOIC | 8 | - | - | 244K |
| 16. | MMJT9435 | Bipolar power transistor | MOT | SOT-223 | 4 | -55°C | 150°C | 94K |
| 17. | NDS9435A | Single P-Channel Enhancement Mode Field Effect Transistor | FAIR | SOIC | 8 | - | - | 219K |
| 18. | SDM9435A | 30V; 5.3A; 2.5W; dual enchanced mode field effect transistor (N and P - channel) | SM | Surface mount | 8 | -55°C | 150°C | 359K |
| 19. | SDU9435A | 30V; 10A; 2.5W; N-channel enchanced mode field effect transistor | SM | TO-252 | 3 | -55°C | 150°C | 396K |
| 20. | SI9435DY | P-channel logic level MOSFET, 30V, 5.3A | FAIR | SO | 8 | -55°C | 150°C | 101K |
