We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 211K |
2. | MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 262K |
3. | MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | MOT | TO-247AE | 4 | -55°C | 150°C | 195K |
4. | NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 110K |
5. | NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | FAIR | MDIP | 28 | - | - | 110K |
6. | OM6N100NK | 1000V N-channel MOSFET | OMNI | TO-3 | 2 | -55°C | 150°C | 19K |
7. | OM6N100SA | 1000V; up to 6 Amp, N-channel MOSFET | OMNI | - | 4 | -55°C | 150°C | 40K |
8. | PHD6N10E | PowerMOS transistor | PHLPS | SOT428 | - | - | - | 70K |
9. | PHP26N10E | PowerMOS transistor | PHLPS | SOT78 | - | - | - | 71K |
10. | PRN10016N1000J | Isolated resistor termination network | CAMD | SOIC | 16 | -55°C | 125°C | 126K |
11. | PRN10016N1001J | Isolated resistor termination network | CAMD | SOIC | 16 | -55°C | 125°C | 126K |
12. | PRN10016N1002J | Isolated resistor termination network | CAMD | SOIC | 16 | -55°C | 125°C | 126K |
13. | PRN10016N10R0J | Isolated resistor termination network | CAMD | SOIC | 16 | -55°C | 125°C | 126K |
14. | PRN10116N1001J | Bussed resistor network | CAMD | SOIC | 16 | 0°C | 70°C | 51K |
15. | PRN10116N1002J | Bussed resistor network | CAMD | SOIC | 16 | 0°C | 70°C | 51K |
16. | STD6N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | STM | - | - | - | - | 171K |
17. | STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STM | - | - | - | - | 202K |
18. | STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | STM | - | - | - | - | 202K |
19. | STP16N10L | N-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTOR | STM | - | - | - | - | 50K |
20. | STP16N10L | N-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTOR | STM | - | - | - | - | 50K |