We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | IRF | TO-220 FULLPAK | 3 | -55°C | 150°C | 103K |
| 2. | IXDH35N60B | 600V IGBT with optional diode | IXYS | TO-247AD | 3 | -55°C | 150°C | 101K |
| 3. | IXDH35N60BD1 | 600V IGBT with optional diode | IXYS | TO-247AD | 3 | -55°C | 150°C | 101K |
| 4. | IXDP35N60B | 600V IGBT with optional diode | IXYS | - | 3 | -55°C | 150°C | 101K |
| 5. | IXFH15N60 | 600V HiPerFET power MOSFET | IXYS | TO-247 | 3 | -55°C | 150°C | 82K |
| 6. | IXFM15N60 | 600V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 82K |
| 7. | IXGB75N60BD1 | 600V HiPerFAST IGBT with diode | IXYS | TO-264 | 3 | -55°C | 150°C | 59K |
| 8. | IXKN75N60C | 600V coolMOS power MOSFET | IXYS | SOT-227B | 4 | -40°C | 150°C | 70K |
| 9. | M27C256B-15N6TR | 256 Kbit (32Kb x 8) EPROM, 5V, 150ns | STM | TSOP | 28 | -40°C | 85°C | 107K |
| 10. | M27C256B-25N6TR | 256 Kbit (32Kb x 8) EPROM, 5V, 250ns | STM | TSOP | 28 | -40°C | 85°C | 107K |
| 11. | M27C256B-25N6TR | 256 Kbit (32Kb x 8) EPROM, 5V, 250ns | STM | TSOP | 28 | -40°C | 85°C | 107K |
| 12. | MGP15N60U | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 120K |
| 13. | MGP15N60U | Insulated Gate Bipolar Transistor N-Channel | ON | TO-220 | 3 | - | - | 120K |
| 14. | MGS05N60D | Insulated gate bipolar transistor | MOT | - | 3 | -55°C | 150°C | 135K |
| 15. | MGS05N60D | Insulated Gate Bipolar Transistor N-Channel | ON | - | 3 | - | - | 138K |
| 16. | MMG05N60D | Insulated gate bipolar transistor | MOT | TO-261AA | 4 | -55°C | 150°C | 135K |
| 17. | MMG05N60D | IGBT N-Channel (0.5A, 600V) | ON | SOT-223 | 4 | - | - | 138K |
| 18. | MMG05N60DT1 | IGBT N-Channel (0.5A, 600V) | ON | SOT-223 | 4 | - | - | 138K |
| 19. | MMG05N60DT3 | IGBT N-Channel (0.5A, 600V) | ON | SOT-223 | 4 | - | - | 138K |
| 20. | MTY25N60E | TMOS E-FET power field effect transistor | MOT | TO-264 | 3 | -55°C | 150°C | 236K |
