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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 28C256APC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 2. | 28C256APC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 3. | 28C256APC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | 0°C | 70°C | 41K |
| 4. | 28C256API-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 5. | 28C256API-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 6. | 28C256API-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 7. | 28C256API-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -40°C | 85°C | 41K |
| 8. | 28C256APM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 9. | 28C256APM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 10. | 28C256APM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 11. | 28C256APM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PDIP | 28 | -55°C | 125°C | 41K |
| 12. | HN58C256AP-10 | 265K EEPROM (32-kword x 8-bit), 100ns access time | HIT | plastic DIP | 28 | 0°C | 70°C | 126K |
| 13. | HN58C256AP-85 | 265K EEPROM (32-kword x 8-bit), 85ns access time | HIT | plastic DIP | 28 | 0°C | 70°C | 126K |
| 14. | HY62256AP-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | PDIP | 28 | 0°C | 70°C | 820K |
| 15. | MB89656APF | 8-bit proprietary microcontroller | FJTSU | plastic QFP | 100 | -40°C | 85°C | 779K |
| 16. | MB89656APFV | 8-bit proprietary microcontroller | FJTSU | plastic SQFP | 100 | -40°C | 85°C | 779K |
| 17. | NDS356AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | SOT-23 | 3 | - | - | 78K |
| 18. | TLOE156AP | TOSHIBA T-1.75 InGaAlP ultra bright LED. Lens color water clear. Peak wavelength 612 nm. | MRKTE | - | 2 | -30°C | 85°C | 133K |
| 19. | TLRE156AP | TOSHIBA T-1.75 InGaAlP ultra bright LED. Color red. Lens color water clear. Peak wavelength 644 nm. | MRKTE | T-1.75 | 2 | -30°C | 85°C | 133K |
| 20. | TLYE156AP | TOSHIBA T-1.75 InGaAlP ultra bright LED. Color yellow. Water clear lens. Peak wavelength 590 nm. | MRKTE | T-1.75 | 2 | -30°C | 85°C | 135K |
