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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 5962D0053604TXA | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 2. | 5962D0053604TXC | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 3. | 5962D0053604TXC | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 4. | 5962D0053604TXX | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 5. | 5962D9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 6. | 5962D9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 7. | 5962L9960704TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 8. | 5962L9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 9. | 5962L9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 10. | 5962L9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 11. | 5962P0053604TXA | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 12. | 5962P0053604TXA | 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 128K |
| 13. | 5962P9960704TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 14. | 5962P9960704TXA | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 15. | 5962P9960704TXC | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 16. | 5962P9960704TXX | 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) | UTMC | Flatpack shielded | 36 | -40°C | 125°C | 127K |
| 17. | MI-RC24TX-XXXX | InputV:28V; outputV:48V; 150-300W; 30-..A; complete triple output DC-DC power military supply | VICOR | - | - | - | - | 150K |
| 18. | MI-RC64TX-XXXX | InputV:270V; outputV:48V; 150-300W; 30-..A; complete triple output DC-DC power military supply | VICOR | - | - | - | - | 150K |
| 19. | VI-RU4TX-XXXX | Input Voltage:90-132/180-264Vac; output Voltage:20-95V; 150-600W; 30-120A autoranging AC-DC switcher | VICOR | - | 16 | - | - | 208K |
| 20. | W4TXE0X-0D00 | Diameter: 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K |
