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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | GS840E18T-100 | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 629K |
| 2. | GS840E18T-100I | 100MHz 12ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 629K |
| 3. | GS840E18T-150 | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 629K |
| 4. | GS840E18T-150I | 150MHz 10ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 629K |
| 5. | GS840E18T-166 | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 629K |
| 6. | GS840E18T-166I | 166MHz 8.5ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 629K |
| 7. | GS840E18T-180 | 180MHz 8ns 256K x 18 4Mb sync burst SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 629K |
| 8. | HGTD6N40E1 | 6A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 32K |
| 9. | HGTD6N40E1S | 6A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 32K |
| 10. | HGTH12N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 11. | HGTH20N40E1 | 15A, 20A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 35K |
| 12. | HGTH20N40E1D | 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | INTRS | - | - | - | - | 35K |
| 13. | HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 14. | HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 38K |
| 15. | HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | INTRS | - | - | - | - | 37K |
| 16. | HGTP15N40E1 | 15A, 20A, 400V and 500V N-Channel IGBTs | INTRS | - | - | - | - | 35K |
| 17. | M30240E1-FP | Single chip 16-bit CMOS microcomputer | MITS | QFP | 80 | 0°C | 70°C | 1M |
| 18. | MBM29DL640E12PBT | Flash memory CMOS 64M (8M x 8/4M x 16) bit | FJTSU | plastic FBGA | 63 | -40°C | 85°C | 913K |
| 19. | MBM29DL640E12TN | Flash memory CMOS 64M (8M x 8/4M x 16) bit | FJTSU | plastic TSOP | 48 | -40°C | 85°C | 913K |
| 20. | MBM29DL640E12TR | Flash memory CMOS 64M (8M x 8/4M x 16) bit | FJTSU | plastic TSOP | 48 | -40°C | 85°C | 913K |
