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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3 | 3 | -55°C | 150°C | 225K |
2. | EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. | EXICO | TO3PBL | 3 | -55°C | 150°C | 225K |
3. | IXFK120N20 | 200V HiPerFET power MOSFET | IXYS | TO-264AA | 3 | -55°C | 150°C | 48K |
4. | IXFN120N20 | 200V HiPerFET power MOSFET | IXYS | SOT-227B | 4 | -40°C | 150°C | 69K |
5. | IXFR120N20 | 200V HiPerFET power MOSFET | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 34K |
6. | IXFX120N20 | 200V HiPerFET power MOSFET | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 48K |
7. | MTB20N20E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 258K |
8. | MTP20N20E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 203K |
9. | R1120N201A-TL | Low noise 150mA LDO regulator. Output voltage 2.0V. "L" active type. Taping specification TL. | RICOH | SOT-23 | 5 | -40°C | 85°C | 187K |
10. | R1120N201A-TR | Low noise 150mA LDO regulator. Output voltage 2.0V. "L" active type. Standard taping specification TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 187K |
11. | R1120N201B-TL | Low noise 150mA LDO regulator. Output voltage 2.0V. H active type. Taping specification TL. | RICOH | SOT-23 | 5 | -40°C | 85°C | 187K |
12. | R1120N201B-TR | Low noise 150mA LDO regulator. Output voltage 2.0V. "H" active type. Standard taping specification TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 187K |
13. | R1120N201B-TR | Low noise 150mA LDO regulator. Output voltage 2.0V. "H" active type. Standard taping specification TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 187K |