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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
1. | 2SD2016 | Transistor For General Purpose | SNKEN | - | - | - | - | 21K |
2. | BGY2016 | UHF amplifier module | PHLPS | SOT365 | - | - | - | 60K |
3. | BGY2016 | UHF amplifier module | PHLPS | SOT365 | - | - | - | 60K |
4. | CXA2016S | Sync Identification for CRT Display | SONY | - | - | - | - | 183K |
5. | DS2016 | 2K x 8 3V/5V Operation Static RAM | DALAS | DIP | 24 | -40°C | 85°C | 254K |
6. | DS2016S | 2K x 8 3V/5V Operation Static RAM | DALAS | SOIC | 24 | -40°C | 85°C | 254K |
7. | HAT2016R(D) | Power switching MOSFET | HIT | FP-8DA | - | - | - | 53K |
8. | MC12016D | Dual modulus prescaler | MOT | SO-8 | 8 | -40°C | 85°C | 67K |
9. | MC12016P | Dual modulus prescaler | MOT | PDIP | 8 | -40°C | 85°C | 67K |
10. | PTB20162 | 40 watts,470-900 MHz PF power transistor | ERSON | 20226 | 6 | - | - | 42K |
11. | PTB20166 | 23 watts,675-925 MHz common base RF power transistor | ERSON | 20209 | 3 | - | - | 46K |
12. | SGM2016AM | GaAs N-channel Dual-Gate MES FET | SONY | - | - | - | - | 61K |
13. | SGM2016AN | GaAs N-channel Dual-Gate MES FET | SONY | - | - | - | - | 56K |
14. | SGM2016AP | GaAs N-channel Dual-Gate MES FET | SONY | - | - | - | - | 61K |
15. | SGM2016M | GaAs N-channel Dual-Gate MES FET | SONY | - | - | - | - | 112K |
16. | SGM2016P | GaAs N-channel Dual-Gate MES FET | SONY | - | - | - | - | 112K |
17. | UAA2016D | Zero voltage switch power controller | MOT | SO-8 | 8 | -20°C | 85°C | 135K |
18. | UAA2016D | Zero Voltage Switch Power Controller | ON | SOIC | 8 | - | - | 129K |
19. | UAA2016P | Zero voltage switch power controller | MOT | PDIP | 8 | -20°C | 85°C | 135K |
20. | UAA2016P | Zero Voltage Switch Power Controller | ON | PDIP | 8 | - | - | 129K |