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1n10 datasheet
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 29 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | 1N100A | Germanium Diode | MSEMI | DO-7 | - | - | - | 62K | | 2. | IXFK21N100Q | 1000V HiPerFET power MOSFET Q-class | IXYS | TO-264AA | 3 | -40°C | 150°C | 98K | | 3. | IXFX21N100Q | 1000V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -40°C | 150°C | 98K | | 4. | IXTA1N100 | 1000V high voltage MOSFET | IXYS | TO-263AA | 3 | -55°C | 150°C | 46K | | 5. | IXTK21N100 | 600V high voltage megaMOS FET | IXYS | TO-264 | 3 | -55°C | 150°C | 137K | | 6. | IXTN21N100 | 600V high voltage megaMOS FET | IXYS | SOT-227B | 4 | -55°C | 150°C | 137K | | 7. | IXTP1N100 | 1000V high voltage MOSFET | IXYS | - | 3 | -55°C | 150°C | 46K | | 8. | MMFT1N10E | Medium power field effect transistor | MOT | TO-261AA | 4 | -65°C | 150°C | 236K | | 9. | MSAFA1N100D | N Channel MOSFET | MSEMI | DIE | - | - | - | 78K | | 10. | MSAFA1N100P3 | N Channel MOSFET | MSEMI | Powermite_3 | - | - | - | 44K | | 11. | MTB1N100E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 256K | | 12. | MTP1N100E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 203K | | 13. | OM1N100SA | 1000V; up to 6 Amp, N-channel MOSFET | OMNI | - | 4 | -55°C | 150°C | 40K | | 14. | OM1N100ST | 1000V; up to 6 Amp, N-channel MOSFET | OMNI | - | 4 | -55°C | 150°C | 40K | | 15. | R3111N101A-TR | Low voltage detector. Detector threshold (-Vdet) 1.0V. Output type: Nch open drain. Standard taping specification TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 205K | | 16. | R3111N101C-TR | Low voltage detector. Detector threshold (-Vdet) 1.0V. Output type: CMOS. Standard taping specification TR | RICOH | SOT-23 | 5 | -40°C | 85°C | 205K | | 17. | RFL1N10 | 1.0A, 80V and 100V, 1.200 ohm, N-Channel Power MOSFET | INTRS | - | - | - | - | 30K | | 18. | RFL1N10L | 1.0A, 80V and 100V, 1.200 ohm, Logic Level, N-Channel Power MOSFET | INTRS | - | - | - | - | 29K | | 19. | RL1N1000F | Photoflash rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 0.5A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K | | 20. | UPF1N100 | N Channel MOSFET | MSEMI | Powermite_3 | - | - | - | 58K |
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