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0N5 datasheet



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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 235      Displaying: 1 - 20
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
HGTD10N50F1S10A, 400V and 500V N-Channel IGBTs
INTRS
-
-
-
-
33K
2.
HGTG20N50C1D20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode
INTRS
-
-
-
-
33K
3.
HGTH20N50C115A, 20A, 400V and 500V N-Channel IGBTs
INTRS
-
-
-
-
35K
4.
HGTH20N50C1D20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
INTRS
-
-
-
-
35K
5.
HGTH20N50E1D20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
INTRS
-
-
-
-
35K
6.
HGTP10N50C110A, 12A, 400V and 500V N-Channel IGBTs
INTRS
-
-
-
-
38K
7.
HGTP10N50C1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
INTRS
-
-
-
-
37K
8.
HGTP10N50E1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
INTRS
-
-
-
-
37K
9.
HGTP10N50E1HGTH12N40C110A, 12A, 400V and 500V N-Channel IGBTs
INTRS
-
-
-
-
38K
10.
HGTP10N50F1D10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
INTRS
-
-
-
-
34K
11.
MTE30N50EISOTOP TMOS E-FET power field effect transistor
MOT
SOT
4
-55°C
150°C
229K
12.
MTV20N50ETMOS E-FET power field effect transistor D3PAK for surface mount
MOT
DPAK
4
-55°C
150°C
273K
13.
MTW20N50ETMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MOT
TO-247AE
4
-55°C
150°C
193K
14.
MTY30N50ETMOS E-FET power field effect transistor
MOT
TO-264
3
-55°C
150°C
237K
15.
OPB860N51Phototransistor Optical Interrupter Switche without Tabs/Gap Width=3.18 mm
QT
-
-
-
-
144K
16.
OPB860N55Phototransistor Optical Interrupter Switche without Tabs/Gap Width=3.18 mm
QT
-
-
-
-
144K
17.
RFH10N5010.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2
INTRS
-
-
-
-
32K
18.
RFM10N5010.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET
INTRS
-
-
-
-
31K
19.
RFV10N50BE10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs
INTRS
-
-
-
-
66K
20.
SM5610N5SIC for quartz crystal oscillating module
NPC
SOP
8
-40°C
85°C
150K
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