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0009 datasheet
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Found: 31 Displaying: 1 - 20| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 1. | AT10-0009 | 800-1000 MHz, voltage variable absorptive attenuator | MACOM | SOW | 16 | -40°C | 85°C | 236K | | 2. | AT10-0009-TB | 800-1000 MHz, voltage variable absorptive attenuator | MACOM | SOW | 16 | -40°C | 85°C | 236K | | 3. | AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | MACOM | SOW | 16 | -40°C | 85°C | 236K | | 4. | AT10-0009TR | 800-1000 MHz, voltage variable absorptive attenuator | MACOM | SOW | 16 | -40°C | 85°C | 236K | | 5. | CH35-0009-S | 10-500 MHz, 11 dB directional coupler | MACOM | FP | 8 | -45°C | 85°C | 15K | | 6. | HAF70009 | 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET | INTRS | - | - | - | - | 107K | | 7. | HCA10009 | 100MHz, Single and Dual Low Noise, Precision Operational Amplifier | INTRS | - | - | - | - | 529K | | 8. | JM38510/30009B2A | 8-INPUT POSITIVE-NAND GATES | TI | FK | 20 | -55°C | 125°C | 215K | | 9. | JM38510/30009BC | 8-Input NAND Gate | NSC | Cerdip | 14 | - | - | 120K | | 10. | JM38510/30009BCA | 8-INPUT POSITIVE-NAND GATES | TI | J | 14 | -55°C | 125°C | 215K | | 11. | JM38510/30009BD | 8-Input NAND Gate | NSC | Cerpack | 14 | - | - | 120K | | 12. | JM38510/30009BDA | 8-INPUT POSITIVE-NAND GATES | TI | W | 14 | -55°C | 125°C | 215K | | 13. | JM38510/30009SC | 8-Input NAND Gate | NSC | Cerdip | 14 | - | - | 120K | | 14. | MJ10009 | 700 V, NPN silicon power darlington transistor | BOCA | TO-3 | 2 | -65°C | 200°C | 196K | | 15. | MJ10009 | 20A Switchmode series NPN silicon power darlington transistor | MOSP | TO-3 | 2 | -65°C | 200°C | 189K | | 16. | MJ10009 | SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode | ON | TO-204 | 2 | - | - | 235K | | 17. | MJ10009 | NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers. | WINGS | TO-3 | 3 | - | - | 21K | | 18. | OH10009 | GaAs hall element | PANAS | - | - | - | - | 45K | | 19. | PTB20009 | 2.5 watts, 935-960 MHz cellular radio RF power transistor | ERSON | 20206 | 4 | - | - | 39K | | 20. | PTF10009 | 85 watts, 1.0 GHz GOLDMOS field effect transistor | ERSON | 20230 | 6 | - | - | 228K |
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