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F12C30A Datasheet | | Description: | Switchmode dual fast recovery power rectifier, 300V, 12A | Manufacturer: | MOSP | Temp. range: | Min: -65°C | Max: 150°C | Package: | Not available... | Pins: | 3 | Datasheet: | F12C30A.PDF (141Kb) |
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# | Component part name | Component Description | Manufacturer | PDF size | 1. | F1206 | 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 36K | 2. | F1207 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 37K | 3. | F1208 | 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 38K | 4. | F1209 | 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 36K | 5. | F1210 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 37K | 6. | F1214 | 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor | POFET | 35K |
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| F12C30A.PDF
F12C30A Datasheet10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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