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NDH853N Datasheet | | Description: | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V | Manufacturer: | Fairchild Semiconductor | Temp. range: | Min: - | Max: - | Package: | SuperSOT-8 | Pins: | - | Datasheet: | NDH853N.PDF (82Kb) |
Related datasheets for NDH853N:Lower in the list you can see the relative results of searching, which resembling the inquiring. If there is no necessary name in the results of searching for NDH853N – look at the relative results.
# | Component part name | Component Description | Manufacturer | PDF size | 1. | NDH8301N | Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | FAIR | 211K | 2. | NDH8303N | Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | FAIR | 72K | 3. | NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor | FAIR | 70K | 4. | NDH831N | N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | FAIR | 221K | 5. | NDH8320C | Dual N & P-Channel Enhancement Mode Field EffectTransistor [Not recommended for new designs] | FAIR | 74K | 6. | NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] | FAIR | 251K |
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| NDH853N.PDF
NDH853N Datasheet Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
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