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F1020 datasheet



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Found: 11      Displaying: 1 - 11
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
F1020Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
40K
2.
MBRF102010A, 20V ultra fast recovery rectifier
MCC
ITO-220AC
-
-
-
99K
3.
MBRF1020CT10A, 20V ultra fast recovery rectifier
MCC
ITO-220AB
-
-
-
390K
4.
MURF1020CT10A, 200V ultra fast recovery rectifier
MCC
ITO-220AB
-
-
-
121K
5.
PTF10202740 watts, 925-960 MHz GOLDMOS field effect transistor
ERSON
20222
3
-
-
207K
6.
PTF10202818 watts, 860-960 MHz GOLDMOS field effect transistor
ERSON
20251
3
-
-
219K
7.
RD38F1020C0ZBL032-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns
INTEL
BGA
66
-25°C
85°C
1M
8.
RD38F1020C0ZTL032-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family, 70ns
INTEL
BGA
66
-25°C
85°C
1M
9.
SRF1020Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
CNEL
ITO-220AC
2
-65°C
150°C
183K
10.
SRF1020Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
CNEL
ITO-220AB
3
-65°C
125°C
170K
11.
SRF1020ASchottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
CNEL
ITO-220AB
3
-65°C
125°C
170K
1


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