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F1015 datasheet



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Found: 11      Displaying: 1 - 11
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
F1015Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
POFET
-
4
-65°C
150°C
38K
2.
MRF10150150 W, microwave power transistor NPN silicon
MACOM
-
3
-
-
139K
3.
MRF10150Microwave pulse power transistor
MOT
-
3
-
-
90K
4.
MRF1015MAMicrowave pulse power transistor
MOT
-
4
-
-
110K
5.
MRF1015MBMicrowave pulse power transistor
MOT
-
4
-
-
110K
6.
MURF1015CT10A, 150A ultra fast recovery rectifier
MCC
ITO-220AB
-
-
-
121K
7.
MURF1015CT10A, 150A ultra fast recovery rectifier
MCC
ITO-220AB
-
-
-
121K
8.
PTF1015360 watts, 1.8-2.0 GHz GOLDMOS field effect transistor
ERSON
20248
2
-
-
108K
9.
PTF1015485 watts, 1.93-1.99 GHz GOLDMOS field effect transistor
ERSON
20248
2
-
-
256K
10.
TRF1015DB RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS
TI
DB
20
-
-
292K
11.
TRF1015IDB RECEIVER FRONT-END FOR 900 MHZ CELLULAR AND DIGITAL CORDLESS
TI
DB
20
-
-
292K
1


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