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NTE581 datasheet



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Found: 8      Displaying: 1 - 8
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1.
NTE581General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A.
NTE
-
2
-65°C
175°C
17K
2.
NTE5810Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
3.
NTE5811Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A.
NTE
DO4
2
-65°C
175°C
24K
4.
NTE58126 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
5.
NTE58156 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
6.
NTE58176 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max average forward rectified current 6A.
NTE
-
2
-65°C
175°C
15K
7.
NTE5818Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
NTE
DO4
2
-65°C
150°C
18K
8.
NTE5819Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
NTE
DO4
2
-65°C
150°C
18K
1


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