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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1. | 1N100A | Germanium Diode | MSEMI | DO-7 | - | - | - | 62K |
| 2. | IXFK21N100Q | 1000V HiPerFET power MOSFET Q-class | IXYS | TO-264AA | 3 | -40°C | 150°C | 98K |
| 3. | IXFN21N100Q | 1000V trench power MOSFET Q-class | IXYS | SOT-227B | 4 | -55°C | 150°C | 126K |
| 4. | IXFR21N100Q | 1000V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -55°C | 150°C | 35K |
| 5. | IXFX21N100Q | 1000V HiPerFET power MOSFET Q-class | IXYS | ISOPLUS247 | 3 | -40°C | 150°C | 98K |
| 6. | IXTA1N100 | 1000V high voltage MOSFET | IXYS | TO-263AA | 3 | -55°C | 150°C | 46K |
| 7. | IXTK21N100 | 600V high voltage megaMOS FET | IXYS | TO-264 | 3 | -55°C | 150°C | 137K |
| 8. | IXTN21N100 | 600V high voltage megaMOS FET | IXYS | SOT-227B | 4 | -55°C | 150°C | 137K |
| 9. | IXTP01N100D | 1000V high voltage MOSFET | IXYS | - | 4 | -55°C | 150°C | 51K |
| 10. | IXTP1N100 | 1000V high voltage MOSFET | IXYS | - | 3 | -55°C | 150°C | 46K |
| 11. | IXTU01N100 | 1000V high voltage MOSFET | IXYS | TO-252 | 3 | -55°C | 150°C | 65K |
| 12. | IXTY01N100 | 1000V high voltage MOSFET | IXYS | TO-252 | 3 | -55°C | 150°C | 65K |
| 13. | MSAFA1N100D | N Channel MOSFET | MSEMI | DIE | - | - | - | 78K |
| 14. | MSAFA1N100P3 | N Channel MOSFET | MSEMI | Powermite_3 | - | - | - | 44K |
| 15. | MTB1N100E | TMOS E-FET high energy power FET | MOT | DPAK | 4 | -55°C | 150°C | 256K |
| 16. | MTP1N100E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 203K |
| 17. | OM1N100SA | 1000V; up to 6 Amp, N-channel MOSFET | OMNI | - | 4 | -55°C | 150°C | 40K |
| 18. | OM1N100ST | 1000V; up to 6 Amp, N-channel MOSFET | OMNI | - | 4 | -55°C | 150°C | 40K |
| 19. | RL1N1000F | Photoflash rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 0.5A at Ta=55degC. | RECTR | A-405 | 2 | -65°C | 175°C | 23K |
| 20. | UPF1N100 | N Channel MOSFET | MSEMI | Powermite_3 | - | - | - | 58K |
