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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 133 Displaying: 101 - 120# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 101. | 30KW108A | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | MDE | P-600 | 2 | -55°C | 175°C | 166K | 102. | BUW1015 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STM | - | - | - | - | 206K | 103. | LC35W1000BM-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 104. | LC35W1000BM-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 105. | LC35W1000BTS | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 106. | LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 107. | LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 108. | LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 109. | LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO | - | - | - | - | 165K | 110. | M29W102BB50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | STM | TSOP | 40 | -40°C | 85°C | 154K | 111. | M29W102BT50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | STM | TSOP | 40 | -40°C | 85°C | 154K | 112. | PHW10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K | 113. | PHW10N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 115K | 114. | PHW10N60E | 600 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 115K | 115. | SGW10N60RUF | Short Circuit Rated IGBT | FAIR | - | - | - | - | 541K | 116. | SGW10N60RUFD | Short Circuit Rated IGBT | FAIR | - | - | - | - | 596K | 117. | SSW10N60B | 600V N-Channel MOSFET | FAIR | - | - | - | - | 686K | 118. | STW10NC70Z | N-CHANNEL 700V 0.58OHM 10.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | STM | - | - | - | - | 249K | 119. | STW10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | STM | - | - | - | - | 684K | 120. | STW10NK80Z | N-CHANNEL 800V - 0.78 OHM - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | STM | - | - | - | - | 458K |
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