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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
ChipManuals is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 76 Displaying: 61 - 76| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 61. | 24S470 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV) 47uH | CANDD | - | - | -40°C | 85°C | 100K | | 62. | 24S4R7 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV) 4.7uH | CANDD | - | - | -40°C | 85°C | 100K | | 63. | 54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M | | 64. | 54S416T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M | | 65. | 54S416T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | CRMT | TSOP | 54 | 0°C | 70°C | 1M | | 66. | ARF674S45 | 4500 V, 945 A, 15 kA fast recovery diode | POSEI | - | 2 | -30°C | 125°C | 232K | | 67. | GNR34S431K | Varistor. Max allowable voltage: ACrms=275V, DC=350V. Varistor voltage 387-473V. | CRMT | - | 2 | -40°C | 85°C | 68K | | 68. | GNR34S471K | Varistor. Max allowable voltage: ACrms=300V, DC=385V. Varistor voltage 423-517V. | CRMT | - | 2 | -40°C | 85°C | 68K | | 69. | MDE-34S431K | 430V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K | | 70. | MDE-34S471K | 470V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K | | 71. | SMS24S4R1R1R0R0 | Highly programmable voltage supervisory circuit | SUMIT | SOIC | 8 | -40°C | 85°C | 446K | | 72. | TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 73. | TBP24S41J | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 74. | TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 75. | TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | CERDIP | 18 | 0°C | 70°C | 1M | | 76. | TBP24S41N | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | TI | PDIP | 18 | 0°C | 70°C | 1M |
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