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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | BUZ902P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. | MGNTC | TO247 | 3 | 0°C | 150°C | 24K |
| 22. | BUZ903P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. | MGNTC | TO247 | 3 | 0°C | 150°C | 24K |
| 23. | BUZ905 | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 41K |
| 24. | BUZ905D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 40K |
| 25. | BUZ905DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. | MGNTC | TO-3PBL | 3 | 0°C | 150°C | 39K |
| 26. | BUZ905P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. | MGNTC | TO247 | 3 | 0°C | 150°C | 37K |
| 27. | BUZ905X4S | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. | MGNTC | SOT227 | 4 | 0°C | 150°C | 33K |
| 28. | BUZ906 | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 41K |
| 29. | BUZ906D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 40K |
| 30. | BUZ906DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. | MGNTC | TO-3PBL | 3 | 0°C | 150°C | 39K |
| 31. | BUZ906P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. | MGNTC | TO247 | 3 | 0°C | 150°C | 37K |
| 32. | BUZ906X4S | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. | MGNTC | SOT227 | 4 | 0°C | 150°C | 33K |
| 33. | BUZ907 | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 25K |
| 34. | BUZ907D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 25K |
| 35. | BUZ907DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. | MGNTC | TO-3PBL | 3 | 0°C | 150°C | 24K |
| 36. | BUZ907P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V. | MGNTC | TO247 | 3 | 0°C | 150°C | 24K |
| 37. | BUZ908 | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 25K |
| 38. | BUZ908D | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. | MGNTC | TO-3 | 2 | 0°C | 150°C | 25K |
| 39. | BUZ908DP | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. | MGNTC | TO-3PBL | 3 | 0°C | 150°C | 24K |
| 40. | BUZ908P | P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V. | MGNTC | TO247 | 3 | 0°C | 150°C | 24K |
